Electronic and Optical Properties of Quantum Dot Semiconductor Heterostructures

Abstract

In the article physical properties of semiconductor quantum dots and possibilities of their change through variation of size and occasionally shape are discussed. Modern techniques of fabricating quantum dots and their using in different electronic and optoelectronic devices are described. The comparison of a number of experimental and theoretical studies focused on studies of quantum-size effects, exchange electron-hole and electron-phonon interaction, Stokes shift, oscillator strength, light absorption coefficient and luminescence of semiconductor nanoheterosystems has been performed. The interaction of quantum dots with external electric and magnetic fields depending on quantum dot size and presence of hydrogenic impurities also has been analyzed.